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Electronics for Technicians by G. D. Bishop (auth.)

By G. D. Bishop (auth.)

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C . 7 INTERSTAGE COUPLING input (a) output amplifier ohms. c. c. 7. 7b is (Vg - VouT)/R . c. voltmeter for the reasons given before, similarly, the 600 n generator is used to match the circuit impedance. 7a) and VO U T (equal to about 100 mV for the transistor amplifiers described in this chapter) . LF being suitable for audio frequencies, whose impedance is normally measured at I kHz. ). Each coupling method has advantages over the others, and so these will be described in turn. 8, where a series capacitor is seen to limit the low-frequency response and a parallel capacitance is seen to limit the high-frequency response.

8) Observe the ambient temperature and record on the characteristics. 15 being altered accord ingly. Similarly a p-channel FET will require reversed battery polarities, a similar procedure being adopted . 11. 8 Characteristic Equation for the FET An equation exists in physical electronics which represents the performance of an FET in the depletion mode (all JUGFETs and depletion MOSFETs) 10 = Ioss(l - VG S/V p )2 The enhancement MOSFET with positive gate has special equation 10 = K(VG S - VT )2 .

For this reason class B amplifiers are used in power amplifier stages but, since they amplify only half the input signal, they are used in pairs as can be seen later in this chapter; each one of the pair amplifies one half of the signal, the two halves being added in the output device. This figure can be obtained directly from the ratio of peak-to-peak output voltage swing, VO U T , and input voltage swing, VI N , expressed just as a number. Alternatively the voltage gain can be expressed in decibels - a more convenient method when considering very large numbers - where voltage gain = 20 10gI0---(iro u TI VIN) dB.

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