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Device Electronics for Integrated Circuits 3rd Ed. by Richard S. Muller, Theodore I. Kamins, Mansun Chan

By Richard S. Muller, Theodore I. Kamins, Mansun Chan

Focusing in particular on silicon units, the 3rd version of "Device Electronics for built-in Circuits" takes scholars in integrated-circuits classes, from basic physics to particular gadget operation. as the e-book focuses totally on silicon units, each one subject can contain extra intensity, and huge labored examples and perform difficulties make sure that scholars comprehend the main points.

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Additional resources for Device Electronics for Integrated Circuits 3rd Ed.

Example text

As we will see in Chapter 4, these broken bonds can introduce allowed states into the energy gap of the silicon substrate at its surface and degrade the electrical behavior of device regions near the surface. However, a well-formed silicondioxide layer on the silicon surface electrically passivates almost all of these surface states, allowing nearly ideal behavior of the surface region of the silicon. Although the area density of bonds at the silicon surface is about 10 15 cm- 2, the number of electrically active bonds can be reduced to less than lOll cm- 2 by properly growing a silicon-dioxide layer on the surface.

Three strong emission wavelengths in the UV wavelength range occur at 436 nm (G-line), 405 nm (H-line), and 365 nm (I-line). Finer features can be defined by using shorter-wavelength I-line illumination, instead of G-line illumination. Even shorter wavelengths can be obtained by using light emitted by laser sources, such as a KrF or ArF laser; commonly used wavelengths with these laser sources are 248 and 193 nm, and using an Fz source at 157 nm is being explored. Reducing the wavelength further is more difficult because most materials used for lenses and masks become opaque at shorter wavelengths.

The linear rate coefficient is larger for the (111) orientation. which has fewer bonds between adjacent planes than does (100)-oriented silicon. 3 THERMAL OXIDATION 71 The data in both figures apply to oxides grown on (111)- and (100)-oriented Si. The oxide thicknesses is somewhat less for (lOO)-oriented material, especially for thin oxides and at lower oxidation temperatures at which growth is limited for a longer time by the surface oxidation rate IF(3)]. Sb). Oxide thicknesses of a few hundred nanometers are often used, with 1 to 2 f1m being the upper practical limit when conventional oxidation techniques are employed.

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