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Advanced Microwave and Millimeter Wave Technologies: by Moumita Mukherjee

By Moumita Mukherjee

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Extra resources for Advanced Microwave and Millimeter Wave Technologies: Semiconductor Devices, Circuits and Systems

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According to the multivalency of vanadium ion and its complex oxide structure (Griffiths & Eastwood, 1974), numerous phases with stoechiometries close to VO2 can exist (from V4O to V2O5) and the synthesis of phase pure VO2 thin films is an important challenge. Reactive pulsed laser deposition (PLD) is a suitable technique for obtaining high-purity oxide thin films (Chrisey & Hubler, 1994; Eason, 2007), very well adapted for obtaining the stoichiometric VO 2 layers. However, careful optimisation of the working parameters is necessary to obtain thin films of the pure VO2 stabilized phase without any post-treatment.

The obtained device was placed using a conductive epoxy paste (for defining the ground plane of the micro strip geometry) in a metallic package and the transmission line ends are electrically connected to SMA-type connectors for measurements (Fig. 12). Fig. 12. Photography of the realized VO2-based four-pole filter inserted in a metallic housing and connected to SMA connectors for measuring its response. a. 50 Advanced Microwave and Millimeter Wave Technologies: Semiconductor Devices, Circuits and Systems b.

Future investigations It could be noted [26] detailed discussions of the shaped charge concept and an extensive list of sources (too numerous to list here) are available elsewhere. This concept is not well understood by people outside the warhead community. For example, the jet is not “cutting plasma”, it is not a liquefied or molten metal jet, the jet temperature is not 20,000 C, and the density of the jet is not several times that of steel, etc. [26]. The main physical problems today in applications to plasma antenna design are as follows.

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